r o h s r o h s s e m i c o n d u c t o r n k d 6 0 0 s e r i e s n ell semiconductors standar d diodes, 600 a ( magn - a - p ak power module s ) p a g e 1 o f 5 s u p e r m a g n a - p a k featu res ? high surge capabil ity ? volt age ratings up to 200 0 v ? 3000 v isol ating volt age wi th non - toxic substrat e rms ? ind ustrial standard p ackage ? c ompliant to rohs ? ul approved file e320098 ap plication s ? r bri dge for large motor dri ves ? r br idge for large ups m 10 3 1 + - ~ 1 2 3 a l l d i m e n s i o n s i n m i l l i m e t e r s ( i n c h e s ) 2 w w w . n e l l s e m i . c o m 3 1 ( 1 . 2 2 ) 5 0 ( 1 . 9 7 ) 4 4 ( 1 . 7 3 ) 2 8 ( 1 . 1 ) 1 1 2 ( 4 . 4 1 ) 1 2 4 ( 4 . 8 8 ) 1 4 9 ( 5 . 6 7 ) 6 0 ( 2 . 3 6 ) 4 0 ( 1 . 8 9 ) 2 6 ( 0 . 9 8 ) 2 6 ( 0 . 9 8 ) 5 2 ( 2 . 0 5 )
r o h s r o h s s e m i c o n d u c t o r n ell semiconductors pr oduc t summar y i f ( av ) 600 a modul es - diode , high voltage type major ra tin gs an d char acteristics symbol char acter istics v alues units i f ( av ) 600 t c 100 i f ( rms ) 942 t c 100 i fsm 50 hz a 60 hz 2 i t 50 hz ka 2 s 60 hz 18050 rrm range t stg , t j range 2 i t a a c c c v - 40 to 150 800 to 2000 1683 1805 20100 19000 2 ka t vol t age ra ting s type number vol t age code v rrm , maximum repetitive peak reverse vol t age v v rsm , maximum non - repetitive peak reverse vol t age v i rrm maximum a t t j maximum ma nkd 600 08 800 900 50 12 1200 1300 16 1600 1700 20 2000 2100 for w ard cond uctio n p arame ter symbol test conditions v alues units maximum average forward current at case temperature i f ( av ) 600 100 maximum rms forward current l f ( rms ) maximum peak , one - cycl e forwar d , non - repetitive surge curr ent i fsm t = 10 ms no voltage reapplie d sinusoidal half wave , initial t = t ma ximu m j j 19.0 ka t = 8.3 ms t = 10 ms 1805 ka 2 s t = 8.3 ms t = 10 ms 100 % v rrm reapplie d 1319 t = 8.3 ms maximum 2 i t for fusi ng maximum forward voltage drop 1230 1683 2 i t v 1.45 2 ka t 18050 2 i t v f m t = 0 . 1 m s t o 1 0 m s , n o v o l t a g e r e a p p l i e d 20.1 a 942 a n k d 6 0 0 s e r i e s l = 1 0 0 0 a , t = 2 5 c , t = 1 0 m s s i n e p u l s e p k j p 1 8 0 c o n d u c t i o n , h a l f s i n e w a v e a t t = 1 0 0 c c 1 8 0 c o n d u c t i o n , h a l f s i n e w a v e maximum 2 i t for fusi ng c bloc king p arame ter symbol test condition s v alues units rms insulation voltage v ins t = 1 s maximum peak reverse and off - stat e leakage curren t i rrm a 50 t = t m a x i m u m , r a t e d v a p p l i e d j j r r m t = 2 5 c j 3 0 0 0 5 0 v m a p a g e 2 o f 5 w w w . n e l l s e m i . c o m
r o h s r o h s s e m i c o n d u c t o r n ell semiconductors t hermal and mechan ical spec ifica tions p arameter symbol test conditions v alue s units maximum junc tion operating and stora ge temperat ure range - 40 to 150 maximum therm al resistanc e , junction to ca se per junction dc operation k / w maximum therm al resistance , case to heatsink 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommend ed and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound . 6 to 8 nm busbar to smap 12 to 15 approximate weight g case style see dimens ions - link at the end of datashet 0.065 1500 super magn-a-pak r thjc conduct ion conduction angle 180 0.006 0.011 0.015 sinusoidal conduction rect angular conduction test conditions units 120 90 60 30 0.009 0.011 0.014 0.021 0.037 0.022 0.038 t = t maximum j j k/w n o t e ? t h e t a b l e a b o v e s h o w s t h e i n c r e m e n t o f t h e r m a l r e s i s t a n c e r t h j c w h e n d e v i c e s o p e r a t e a t d i f f e r e n t c o n d u c t i o n a n g l e s t h a n d c . 1 fig curren t ratings characteristics 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 1 00 2 00 30 0 40 0 50 0 60 0 7 00 3 0 6 0 9 0 1 2 0 1 80 m a x i m u m a l l o w a b l e c a s e t e m p e r a t u r e c ( ) co nd uction a ngle a vera ge forw a rd cu r r e nt a ( ) . 2 fig curren t ratings characteristics 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 2 00 40 0 6 00 80 0 1 0 00 d c 3 0 6 0 9 0 1 2 0 1 8 0 m a x i m u m a l l o w a b l e c a s e t e m p e r a t u r e c ( ) conduction period a v e ra ge forw a r d c urre n t a ( ) n k d 6 0 0 s e r i e s t , t j s t g r t h j c r t h - h s c r ( d c ) = 0 . 0 6 5 k / w t h j c r ( d c ) = 0 . 0 6 5 k / w t h j c c ord ering inform ation table 1 - module type: nkd.nkj and nkc for (diode + diode) module 2 3 - current rating : i f ( a v ) - v oltage code x 100 = v rrm device code nkd 1 6 6 0 0 / 3 2 1 p a g e 3 o f 5 w w w . n e l l s e m i . c o m
. 3 fig forward power loss characteri stics . 4 fig forward power loss characteri stics 0 1 00 2 00 3 00 4 00 5 00 6 00 7 00 0 1 0 0 2 00 3 0 0 40 0 5 0 0 6 00 a verage f or w a rd curr en t a ( ) m a x i m u m a v e r a g e f o r w a r d p o w e r l o s s w ( ) co nduction an g le 1 8 0 1 2 0 9 0 6 0 3 0 p er j u n ct io n t = 1 5 0 c j 0 1 0 0 2 0 0 3 0 0 4 0 0 5 0 0 6 0 0 7 0 0 8 0 0 9 0 0 100 0 0 20 0 4 00 6 00 800 1 0 0 0 d c 1 8 0 1 2 0 9 0 6 0 3 0 a v erage fo rward curre nt a ( ) r m s l im i t m a x i m u m a v e r a g e f o r w a r d p o w e r l o s s w ( ) co ndu ctio n pe ri od p e r ju n c ti o n . 7 fig forwar d power loss characteristics 40 00 60 00 80 00 10 000 12 000 14 000 16 000 18 000 1 1 0 1 0 0 p e a k h a l f s i n e w a v e f o r w a r d c u r r e n t a ( ) n um b e r o f eq u a l a m p l it u d e h a lf c y cl e c u rre n t p u ls e s n ( ) p e r j u n c ti o n @ 60 0.00 83 s hz @ 50 0.01 00 s hz . 4000 6000 8000 1000 0 1200 0 1400 0 1600 0 1800 0 2000 0 0. 01 0. 1 1 p e a k h a l f s i n e w a v e f o r w a r d c u r r e n t a ( ) p ulse t r a i n du r a ti o n s ( ) p e r j u n c ti o n 0 2 5 50 7 5 10 0 125 150 m a x i m u m all o w a ble ambi e nt t em p er ature c ( ) r = 0 . 0 2 k / w - d e l t a r t h s a 0 . 0 4 k / w 0 . 0 6 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 1 6 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 . 5 k / w 0 2 0 0 400 600 800 10 00 0 2 00 400 6 00 800 10 00 t o ta l rm s o utp ut c urre n t a ( ) m a x i m u m t o t a l f o r w a r d p o w e r l o s s w ( ) vs k d ser ies 600 .. p er ju n ct io n 1 80 ( ) sin e d c r o h s r o h s s e m i c o n d u c t o r n ell semiconductors n k d 6 0 0 s e r i e s t = 1 5 0 c j a t a n y r a t e d l o a d c o n d i t i o n a n d w i t h r a t e d v r e a p p l i e d f o l l o w i n g s u r g e . r r m l n i t i a l t = 1 5 0 c j f i g . 5 m a x i m u m n o n - r e p e t i t i v e s u r g e c u r r e n t f i g . 6 m a x i m u m n o n - r e p e t i t i v e s u r g e c u r r e n t m a x i m u m n o n r e p e t i t i v e s u r g e c u r r e n t v e r s u s p u l s e t r a i n d u r a t i o n l n i t i a l t = 1 5 0 c j n o v o l t a g e r e a p p l i e d r a t e d v r e a p p l i e d r r m l n i t i a l t = 1 5 0 c j r m s l im it p a g e 4 o f 5 w w w . n e l l s e m i . c o m
fig.8 forward power loss characteristics 0 25 50 75 10 0 125 15 0 m ax im um a llow a ble a m b ien t t e mperat ur e c ( ) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 50 0 10 00 15 00 20 00 25 00 30 00 0 200 400 600 80 0 10 00 120 0 t o ta l output c ur ren t a ( ) m a x i m u m t o t a l p o w e r l o s s w ( ) 180 ( ) s in e 180 ( ) r ec t 2 6 0 0 . . x n k d s e r ie s s i n g l e p h a se b r id g e c o n n e c t e d . 9 fig forward power loss characteris tics 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 maxi mum al low abl e a m bien t t e mperat ure c ( ) r = 0 . 0 1 k / w - d e l t a r 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w t h s a 0 50 0 10 00 15 00 20 00 25 00 30 00 35 00 40 00 45 00 0 300 60 0 90 0 12 00 15 00 180 0 t ot al output cu r ren t a ( ) m a x i m u m t o t a l p o w e r l o s s w ( ) 1 2 0 ( ) r ec t 3 6 0 0 . . x n k d s e r i e s t h r e e p h as e b r i d g e c o n n e c te d 0.001 0.01 0.1 0.001 0. 01 0.1 1 10 1 00 sq uare w a ve pul s e d u r a tion s ( ) t h j c t r a n s i e n t t h e r m a l i m p e d a n c e z k w ) ( / p e r j u n ct i o n s te a dy s ta t e v a l u e : r k w = 0 . 0 6 5 / ( ) d c o p e r a t i o n thjc r o h s r o h s s e m i c o n d u c t o r n ell semiconductors n k d 6 0 0 s e r i e s p a g e 5 o f 5 t = 1 5 0 c j t = 1 5 0 c j f i g . 1 0 t h e r m a l l m p e d a n c e z c h a r a c t e r i s t i c t h j c w w w . n e l l s e m i . c o m
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